Jaganandha Panda, Ph.D

Jaganandha Panda, Ph.D
Email: jaganandha.panda@jh-inst.cas.cz
Tel: 420266053856
Room: 504


Exfoliation of two-dimensional layered materials, photo-lithography, and suspended (substrate-free) low-dimensional materials and devices for opto-spintronics.


Nanodevice fabrication, lithographic techniques, thin films growth, electrical, magnetic, and spin transport, graphene, and other 2D materials.


  • 2021-Present Post-doctoral fellow, exfoliation of two-dimensional layered materials, suspended low-dimensional materials and devices for opto-spintronics, Nanocarbon group, J. Heyrovsky Institute of Physical Chemistry, Czechia, (superv. Dr. Martin Kalbac).
  • 2018-2021 Post-doctoral fellow, spin transport in Graphene lateral spin valves, Uppsala University, Sweden.
  • 2017-2018 Assistant Professor, Madanapalle Institute of Technology and Sciences, India.
  • 2011-2016 Ph.D. in Physics, Electrical spin injection into Si from magnetic metals and Metal Oxides using SiO2 and MgO tunnel barrier for Spintronics, Indian Institute of Technology (IIT) Kharagpur, India.
  • 2009-2011 M.Tech. in Solid State Technology, Indian Institute of Technology (IIT) Kharagpur, India.
  • 2005-2007 M.Sc. in Physics, Andhra University, India.
  • 2003-2005 B.Sc. in Physical Science, Andhra University, India.

    Selected publications

    • J. Panda, M. Ramu, Olof Karis, Tapati Sarkar, and M. Venkata Kamalakar, Ultimate Spin Currents in Commercial Chemical Vapor Deposited Graphene, ACS Nano 14, 12771-12780 (2020).
    • I.G. Serrano, J. Panda, Fernand Denoel, Örjan Vallin, Dibya Phuyal, Olof Karis, and M. Venkata Kamalakar, Two-Dimensional Flexible High Diffusive Spin Circuits, Nano Lett. 19, 666-673 (2019).
    • Ismael G. Serrano, J. Panda, Tomas Edvinsson and M. Venkata Kamalakar, Flexible transparent graphene laminates via direct lamination of graphene onto polyethylene naphthalate substrates, Nano Scale Advances 2, 3156 (2020).
    • J. Panda, P. Banerjee, and T. K. Nath, Electrical spin extraction and giant positive junction magnetoresistance in a Fe3O4/MgO/n Si magnetic diode like heterostructure, J. Phys. D: Appl. Phys. 47, 415103 (2014).
    • J. Panda, S. Chattopadhyay, and T. K. Nath, Temperature dependent junction Capacitance-Voltage characteristics of Ni embedded TiN /SiO2/p-Si metal-insulator-semiconductor structure, J. Appl. Phys. 114, 224508 (2013).
    • J. Panda, S. Chattopadhyay, and T.K. Nath, Temperature dependent spin injection properties of the Ni nanodots embedded metallic TiN matrix and p-Si heterojunction, Thin Solid Films 546, 211 (2013).
    • J. Panda, S. N. Saha and T. K. Nath, Critical behavior and magnetocaloric effect in Co50-xNixCr25Al25 (x=0 and 5) full Heusler alloy system, J. Alloys Compd. 644, 930 (2015).
    • J. Panda and T. K. Nath, Low temperature junction magnetoresistance properties of Co0.65Zn0.35Fe2O4/SiO2/p-Si magnetic diode like heterostructure for spin-electronics, Thin Solid Films 601, 111-118 (2016).
    • J. Panda and T. K. Nath, Spin transport and temperature - dependent giant positive junction magnetoresistance in CoFe2O4/SiO2/p-Si heterostructure, Appl. Phys. A 122, 2 (2016).
    • J. Panda, I. Sasmal and T. K. Nath, Magnetic and optical properties of Mn-doped ZnO vertically aligned nanorods synthesized by hydrothermal technique, AIP Advances 6, 035118 (2016).
    • J. Panda, S. N. Saha, T. K. Nath, Room temperature giant positive junction magnetoresistance of NiFe2O4/n-Si heterojunction for spintronics application, Physica B 448, 184-187 (2014).